2N3053,A
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-E...
2N3053,A
CASE 79-02, STYLE 1
TO-39 (TO-205AD)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage(l)
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
@Total Device Dissipation Tc = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Lead Temperature 1/16", ±1/32" From Case for 10 s
Symbol vCEO VCBO VEBO
"C
PD
TJ' Tstg
2N3053 2N3053A 40 60 60 80
5.0 700 5.0 28.6
-65 to +200
Unit Vdc Vdc Vdc
mAdc
Watts mW/°C
°C
T L + 235 °C
Refer to 2N3019 for graphs.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
R&jc
mA(1) Applicable to 100
(Pulsed):
Pulse Width =s 300 ^tsec, Duty Cycle « 2.0%.
to 700 mA; Pulse Width « 10 Aisec, Duty Cycle =s 2.0%.
Max
35
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.;
r Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(2) dC = 100 /xAdc, Ib = 0)
2N3053 2N3053A
Collector-Emitter Breakdown...
