MCR1906-2

I MCR1906=I o thru MCR1906=6 I I I REVERSE BLOCKING TRIODE THYRISTORS These devices are glassivated planar construction designed for applications in control systems and sensing circuits where low-level gating and holding characteristics are necessary. . Low-Level Gate Characteristics — IGT= 1.0 mA (Max) @Tc” = 25°C @ Low Holding Current – IH = 5.0 mA (Max) @ Tc = 25°C ~.:. ~T”* ,,,{,~:’, \ . ,..)X>..,$, ”, ,.:s* ~‘,.,$. ,,,>,, *** o MAXIMUM RATINGS (T I = 100°C un[ess othe v~~~ IT(RMS) Value 25 50 100 200 300 400 500 600 1,6 o ‘eak Non-R~eti$ve Surge Current (on$$~~?~b Hz, TJ = -40to+110°C) P‘~+~.\1e.,%.’\,,ak~n,d raW@urrent followed by and voltage ‘*. ‘eak Gate Power Average Gate Power ‘eak Gate Current ~eak Gate Voltage ~perating Junction Temperature Range jtorage Temperature Range -cad Solder Temperature (>1/16” From Case, 10 s max.) ITSM 15 PGM PGF(AVj IGM VGM TJ Tstg — 0.1 0.01 0.1 6.0 –65to+l10 -65to +150 +230 Unit volt...