2N4906

SILICON EPITAXIAL PNP TRANSISTOR 2N4906 Low Collector Saturation Voltage. Hermetic TO3 Metal Package. Designed For General Purpose, Switching and Power Amplifier Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -80V VCEO Collector – Emitter Voltage -80V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -1.0A PD Total Power Dissipation at TC = 25°C 87.5W Derate Above 25°C 0.5W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab as...