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2N4905 Dataheets PDF



Part Number 2N4905
Manufacturers TT
Logo TT
Description SILICON EPITAXIAL PNP TRANSISTOR
Datasheet 2N4905 Datasheet2N4905 Datasheet (PDF)

SILICON EPITAXIAL PNP TRANSISTOR 2N4905 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -1.0A PD Total Power Dissipation at TC = 25°C 87.5W D.

  2N4905   2N4905


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SILICON EPITAXIAL PNP TRANSISTOR 2N4905 • Low Collector Saturation Voltage. • Hermetic TO3 Metal Package. • Designed For General Purpose, Switching and Power Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -5A IB Base Current -1.0A PD Total Power Dissipation at TC = 25°C 87.5W Derate Above 25°C 0.5W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 2 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab as.


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