WWW.Microsemi .COM
PRELIMINARY
RF PRODUCTS DIVISION
MMBR911MLT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The MMBR911ML...
WWW.Microsemi .COM
PRELIMINARY
RF PRODUCTS DIVISION
MMBR911MLT1
RF & MICROWAVE
TRANSISTORS
DESCRIPTION
The MMBR911MLT1 is a low noise, high gain, discrete silicon bipolar
transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-6.0 GHz
! Low noise-2.9dB@1GHz
! Low cost SOT23 package
Symbol VCBO VCEO VEBO IC PDISS TJ
TSTG
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
12
Emitter-Base Voltage
2.0
Device Current
60
Power Dissipation
333
Junction Temperature
150
Storage Temperature
-55 to +150
Unit V V V mA mW
C
C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 225 C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23 MMBR911MLT1
Symbol
BVCBO BVCEO ICBO
hFE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
IC = .1mA IC =1.0mA VCB =15V VCE =10V
Conditions
IE = 0 IB = 0 IE =...
