MMBD6100

MMBD6100 Silicon Epitaxial Planar Switching Diode Features Small package Low forward voltage Fast reverse recovery time Small total capacitance 3 12 Marking Code: A4 TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Maximum Peak Forward Current Non-Repetitive Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Air Junction and Storage Temperature Range at t = 1 s at t = 1 µs Symbol VR IF IFM IFSM Ptot RθJA Tj, Tstg Value 70 200 300 1 2 300 417 - 55 to + 150 Unit V mA mA A mW °C/W OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 1 mA at IF = 100 mA Reverse Current at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Total Capacitance at VR = 0 Reverse Recovery Time at IF = IR = 10 mA Symbol VF IR V(BR)R CT trr Min. 0.55 0.85 - 70 - - Max. 0.7 1.1 0.1 - 2.5 4 Unit V μA V pF ns SEMTECH ELECTRONICS LTD. ® Dated : 23/11/2015 Rev:03 MMBD6100 Forward Vol...