MMBD2836

Silicon Epitaxial Planar Switching Diode MMBD2835, MMBD2836 Features Small package Low forward voltage Fast reverse recovery time Small total capacitance Applications Ultra high speed switching application Absolute Maximum Ratings (Ta = 25 OC) Parameter Reverse Voltage Forward Current Power Dissipation Junction Temperature Storage Temperature Range 3 12 Marking Code: A1 SOT-23 Plastic Package MMBD2835 MMBD2836 Symbol VR IF Ptot Tj Tstg Value 35 75 100 350 150 - 55 to + 150 Unit V mA mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 10 mA at IF = 50 mA at IF = 100 mA Reverse Current at VR = 30 V at VR = 50 V Reverse Breakdown Voltage at IR = 100 µA Diode Capacitance at VR = 0 , f = 1 MHz Reverse Recovery Time at IF = IR = 10 mA, IR(REC) = 1 mA Symbol MMBD2835 MMBD2836 VF VF VF IR MMBD2835 MMBD2836 V(BR)R CT trr Min. - - 35 75 - - Max. 1 1 1.2 100 100 - 4 4 Unit V V V nA V pF ns ShangHai JR Electronics.CO.,LTD. http://www.j...