MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
PNPN devices desi...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Controlled Rectifiers
Reverse Blocking Triode Thyristors
P
NPN devices designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems where reliability of operation is important. Glass-Passivated Surface for Reliability and Uniformity Power Rated at Economical Prices Practical Level Triggering and Holding Characteristics Flat, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
Order this document by MCR106/D
MCR106 Series*
*Motorola preferred devices except MCR106–3
SCRs 4 AMPERES RMS 60 thru 600 VOLTS
G AK
A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 110°C, RGK = 1 kΩ)
MCR106-2
MCR106-3
MCR106-4
MCR106-6
MCR106-8
G A K
CASE 77-08 (TO-225AA)
STYLE 2
Symbol
VDRM and
VRRM
Value
60 100 200 400 600
Unit Volts
...