2N2895

2N2895 2N2896 2N2897 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO VCER vCBO vEBO 2N2895 65 80 120 2N2896 90 140 140 7.0 2N2897 45 60 60 Unit Vdc Vdc Vdc Vdc ic 1.0 Adc PD 0.5 2.86 Watt mW/°C Pd TJ. Tstg 1.8 10.3 -65 to +200 Watts mW/°C °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted. OFF CHARACTERISTICS Characteristic Collector-Emitter Breakdown Voltage! 1) (IC = 100 mAdc, Rg E = 10 ohms) 2N2895 2N2896 2N2897 Collector-Emitter Sustaining VoltageO) 0c = 100 mAdc, Ib = 0) 2N2895 2N2896 Collector-Base Breakdown Voltage dC = 0.1 mAdc, l£ = 0) Emitter-Base Breakdown Voltage (lg = 0.1 mAdc, Ic = 0) Coll...