2N2896

2N2895 2N2896 2N2897 SILICON NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2895, 2N2896, and 2N2897 are silicon NPN epitaxial planar transistors designed for small signal, general purpose applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCER Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N2895 120 80 65 2N2896 140 140 90 7.0 1.0 500 1.8 -65 to +200 2N2897 60 60 45 UNITS V V V V A mW W °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2895 2N2896 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=60V - 2.0 - 10 ICBO VCB=60V, TA=150°C - 2.0 -- ICBO VCB=90V -- - 10 ICBO VCB=90V, TA=150°C -- - 10 IEBO VEB=5.0V - 5.0 - 10 ...