NPN Bipolar Transistor
Features:
• Collector Emitter Breakdown Voltage • DC Current Gain • Current Gain Bandwidth Produ...
NPN Bipolar
Transistor
Features:
Collector Emitter Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Low Noise Figure
: BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc
: fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA dc, f = 100 Hz
TO-18
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Dimension
Millimetres Minimum Maximum
A 5.31 5.84
B 4.52 4.95
C 4.32 5.33
D
0.406
0.533
E - 0.762
F
0.406
0.483
G 2.54 BSC
H
0.914
1.17
J
0.711
1.22
K 12.7
-
L 6.35 -
M 45° BSC
N 1.27 BSC
P - 1.27
Inches
Minimum Maximum
0.209
0.23
0.178
0.195
0.17 0.21
0.016
0.021
- 0.03
0.016
0.019
0.1 BSC
0.036
0.046
0.028
0.048
0.5 -
0.25 -
45° BSC
0.05 BSC
- 0.05
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11/01/12 V1.1
NPN Bipolar
Transistor
Maximum Ratings
Rating
Symbol
Value
Unit
Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation at TA = ...