2N2484

NPN Bipolar Transistor Features: Collector Emitter Breakdown Voltage DC Current Gain Current Gain Bandwidth Product Low Noise Figure : BVCEO = 60 V dc (minimum) at IC = 10 mA dc : 1 µA dc to 10 mA dc : fT = 100 MHz (Typical) at IC = 500 µA dc : NF = 8 dB (Typical) at IC = 10 µA dc, f = 100 Hz TO-18 www.element14.com www.farnell.com www.newark.com Dimension Millimetres Minimum Maximum A 5.31 5.84 B 4.52 4.95 C 4.32 5.33 D 0.406 0.533 E - 0.762 F 0.406 0.483 G 2.54 BSC H 0.914 1.17 J 0.711 1.22 K 12.7 - L 6.35 - M 45° BSC N 1.27 BSC P - 1.27 Inches Minimum Maximum 0.209 0.23 0.178 0.195 0.17 0.21 0.016 0.021 - 0.03 0.016 0.019 0.1 BSC 0.036 0.046 0.028 0.048 0.5 - 0.25 - 45° BSC 0.05 BSC - 0.05 Page <1> 11/01/12 V1.1 NPN Bipolar Transistor Maximum Ratings Rating Symbol Value Unit Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Power Dissipation at TA = ...