2N2297

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T/\ = 25°C Derate above 25°C Total Device Dissipation (a Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol vCEO VCBO VEBO ic PD pd TJ, Tstg Value 35 80 7.0 1.0 800 4.56 5.0 28.6 -65 to +200 Unit Vdc Vdc Vdc Adc mW mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Lead Temperature, 1/16" from Case for 10 seconds Symbol RTRANSISTOR NPN SILICON Refer to 2N3019 for graphs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(2) dC = 30 mAdc, Ib = 0) Collector-Base Breakdown Voltage dC = 100 ^Adc, El = 0) Emitter...