2N5196

8/2014 2N5196, 2N5197, 2N5198, 2N5199 N-Channel Dual Silicon Junction Field-Effect Transistor ∙ Differencial Inputs At 25oC free air temperature Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (pulsed) IGSS VGS(OFF) IDSS Dynamic Electrical Characteristics Common-Source Forward Transconductance gfs Common-Source Input Capacitance Ciss Common-Source Reverse Transfer Capacitance Crss Equivalent Short Circuit Input Noise Voltage ~eN Differencial Gate-Source Voltage Differencial Gate Source Voltage with Temperature (VGS1-VGS2) Δ│VGS1-VGS2│ ΔT Absolute maximum ratings at TA = 25oC Reverse Gate Source & Gate Drain Voltage -50V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 300 mW Power Derating 2.6 mW/oC Storage Temperature Range -65oC to +150oC 2N5196, 2N5197, 2N5198, 2N5199 Min Typ Max Unit -50 V Process NJ16 Test Conditions IG = -1...