Unijunction Transistor
Description:
A PN unijunction transistor in a TO–92 type package designed for use in pulse and...
Unijunction
Transistor
Description:
A PN unijunction
transistor in a TO–92 type package designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits
Absolute maximum Ratings:
(Ta = +25°C unless otherwise specified)
Power Dissipation, Pd Derate Above 25°C RMS Emitter Current, Ie(rms) Peak Pulse Emitter Current (Note 1) Current, ie Emitter Reverse Voltage, Vb2e Interbase Voltage, Vb2b1 Operating Junction Temperature Range, Tj Storage Temperature Range, Tstg
: 300mW : 3.0mW/°C : 50mA : 1.5A : 30V : 35V : -65°C to +125°C : -65°C to +150°C
Electrical Characteristics: (Ta = +25ºC Unless otherwise specified)
Parameter Instrinsic Standoff Ratio
Symbol
Test Conditions Vb2b1 = 10V, Note3
Min 0.70
Interbase Resistance
rbb
4.0
Interbase Resistance Temperature Coefficient
0.1
Emitter Saturation Voltage Modulated interbase Current
Veb1(sat) Ib2(mod)
Vb2b1 = 10V, Ie = 50mA, Note 4 Vb2b1 = 10V, Ie = 50mA
-
Emitter Reverse Current ...