2N1132A

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (R BE « 10 Ohms) Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Total Device Dissipation (a 1q = 100°C 2N1132A Operating and Storage Junction Temperature Range Symbol vCEO VCER 2N1132 2N1132A 35 40 < 50 * Unit Vdc Vdc vCBO v EBO "C PD Pd pd 50 60 | < 5.0 > < 600 > < 600 * < 3.43 > < 2.0 « 11.43 < 1.0 > Vdc Vdc mA mW mW/°C Watts mW/t Watts TJ- Tstg -65 to +200 °C 2N1132 A r JAN AVAILABLE CASE 79-02, STYLE 1 TO-39 (TO-205AD) SWITCHING TRANSISTOR PNP SILICON THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R 0JC R 0JA Max 87.49 291.55 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.] Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown V...