MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuo...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
—Collector Current Continuous
Total Device Dissipation
@ Ta = 25°C
MD2369AB
MD2369F,AF,BF MQ2369 Derate above 25°C
MD2369AB
MD2369F,AF,BF MQ2369
Total Device Dissipation
@ TC = 25°C
MD2369,A,B MD2369F,AF,BF MQ2369 Derate above 25°C
MD2369AB
MD2369F,AF,BF MQ2369
Operating and Storage Junction Temperature Range
Symbol vCEO VCBO v EBO
'C
PD
Value
Unit
15 Vdc
40 Vdc
5.0 Vdc 500 mAdc
One Die
All Die
Equal Power
mW
550 350 400
3.14 2.0 2.28
Pd
600 400 600
3.42 2.28 3.42
mW/°C Watts
TJ. Tstg
1:4 0.7 0.7
2.0 .1.4, 2.8
8.0 4.0 4.0
11.4 80 16
- 65 to + 200
mW/°C
°C
MD2369,A,B MD2369F,AF,BF
MQ2369
MD2369,A,B CASE 654-07, STYLE 1
MD2369F,AF,BF
CASE 610A-04, STYLE 1
MQ2369 CASE 607-04, STYLE 1
DUAL GENERAL PURPOSE
TRANSISTOR
NPN SILICON
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case
Thermal Resistance Junction to Ambient
MD2369AB
MD2369F,AF,BF M...