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BZX99-C7V5 Dataheets PDF



Part Number BZX99-C7V5
Manufacturers NXP
Logo NXP
Description Voltage regulator diodes
Datasheet BZX99-C7V5 DatasheetBZX99-C7V5 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX99 series Voltage regulator diodes Product specification Supersedes data of 1999 May 31 1999 Oct 20 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 300 mW • Tolerance: ±5% • Working voltage range: nom. 2.4 to 15 V (E24 range) • Improved Iz/Vz characteristics at low currents (Iz = 50 µA). This results in a noise free and sharp breakdown knee. APPLICATIONS • General regula.

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX99 series Voltage regulator diodes Product specification Supersedes data of 1999 May 31 1999 Oct 20 Philips Semiconductors Product specification Voltage regulator diodes FEATURES • Total power dissipation: max. 300 mW • Tolerance: ±5% • Working voltage range: nom. 2.4 to 15 V (E24 range) • Improved Iz/Vz characteristics at low currents (Iz = 50 µA). This results in a noise free and sharp breakdown knee. APPLICATIONS • General regulation functions, where low noise at low currents is required • Low-power consumption applications (e.g. hand-held applications). DESCRIPTION Low-power low noise voltage regulator diodes in small SOT23 plastic SMD packages. The diodes are available in the normalized E24 ±5% tolerance range. The series consists of 20 types with nominal working voltages from 2.4 to 15 V. Top view handbook, halfpage 2 BZX99 series PINNING PIN 1 2 3 anode not connected cathode DESCRIPTION 1 2 n.c. 3 3 1 MAM243 Fig.1 Simplified outline (SOT23) and symbol. MARKING TYPE NUMBER BZX99-C2V4 BZX99-C2V7 BZX99-C3V0 BZX99-C3V3 BZX99-C3V6 MARKING CODE XL XM XN XP XR TYPE NUMBER BZX99-C3V9 BZX99-C4V3 BZX99-C4V7 BZX99-C5V1 BZX99-C5V6 MARKING CODE XS XT XA XB XC TYPE NUMBER BZX99-C6V2 BZX99-C6V8 BZX99-C7V5 BZX99-C8V2 BZX99-C9V1 MARKING CODE XD XE XU XV XW TYPE NUMBER BZX99-C10 BZX99-C11 BZX99-C12 BZX99-C13 BZX99-C15 MARKING CODE XX XY XZ X2 X3 1999 Oct 20 2 Philips Semiconductors Product specification Voltage regulator diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL IF IZSM Ptot Tstg Tj Note 1. Device mounted on an FR4 printed-circuit board. ELECTRICAL CHARACTERISTICS Total BZX99-C series Tj = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER forward voltage reverse current BZX99-C2V4 BZX99-C2V7 BZX99-C3V0 BZX99-C3V3 BZX99-C3V6 BZX99-C3V9 BZX99-C4V3 BZX99-C4V7 BZX99-C5V1 BZX99-C5V6 BZX99-C6V2 BZX99-C6V8 BZX99-C7V5 BZX99-C8V2 BZX99-C9V1 BZX99-C10 BZX99-C11 BZX99-C12 BZX99-C13 BZX99-C15 VR = 1 V VR = 1 V VR = 1 V VR = 2 V VR = 2 V VR = 2 V VR = 2 V VR = 3 V VR = 3 V VR = 4 V VR = 5 V VR = 5 V VR = 5 V VR = 6 V VR = 7 V VR = 7 V VR = 8 V VR = 9 V VR = 10 V VR = 10.5 V 0.2 0.05 0.02 2 1 0.5 0.1 2 1 1 0.1 0.01 0.1 0.2 0.1 0.1 0.05 0.05 0.05 0.01 CONDITIONS IF = 10 mA; see Fig.4 IF = 100 mA; see Fig.4 0.9 1 PARAMETER continuous forward current non-repetitive peak reverse current total power dissipation storage temperature junction temperature tp = 100 µs; square wave; Tamb = 25 °C prior to surge Tamb = 25 °C; note 1 CONDITIONS − MIN. BZX99 series MAX. 300 UNIT mA see Table 1 − −65 − 300 +150 150 mW °C °C MAX. V V µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA µA UNIT 1999 Oct 20 3 Philips Semiconductors Product specification Voltage regulator diodes Table 1 Per type BZX99-C2V4 to C15 Tj = 25 °C unless otherwise specified. WORKING VOLTAGE VZ (V) at IZ = 50 µA Tol. ±5% MIN. 2V4 2V7 3V0 3V3 3V6 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9V1 10 11 12 13 15 Note 1. ∆VZ = VZ at 100 µA minus VZ at 10 µA THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on an FR4 printed-circuit board. 2. Solderpoint of cathode tab. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to solderpoint CONDITIONS note 1 note 2 2.28 2.57 2.85 3.14 3.42 3.71 4.09 4.47 4.85 5.32 5.89 6.46 7.13 7.79 8.65 9.50 10.45 11.40 12.35 14.25 MAX. 2.52 2.84 3.15 3.47 3.78 4.10 4.52 4.94 5.36 5.88 6.51 7.14 7.88 8.61 9.56 10.50 11.55 12.60 13.65 15.75 MAX. 0.80 0.85 0.90 0.93 0.95 0.97 0.99 0.97 0.60 0.20 0.10 0.10 0.15 0.15 0.10 0.10 0.11 0.12 0.13 0.15 −1.15 −1.35 −1.50 −1.65 −1.80 −1.95 −2.05 −1.90 −0.15 1.75 2.35 3.00 3.60 4.25 5.00 5.80 6.70 7.65 8.60 10.50 VOLTAGE CHANGE ∆VZ(V)(1) TEMP. COEFF. SZ (mV/K) IZtest = 50 µA (see Figs 2 and 3) TYP. 370 350 325 310 300 290 280 275 300 275 250 215 170 150 120 110 110 105 105 100 DIODE CAP. Cd (pF) at f = 1 MHz; VR = 0 V MAX. 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 5.0 4.0 3.0 3.0 3.0 3.0 3.0 3.0 2.5 2.5 2.5 2.0 BZX99 series BZX99-C XXX NON-REPETITIVE PEAK REVERSE CURRENT IZSM (A) at tp = 100 µs; Tamb = 25 °C MAX. VALUE 415 195 UNIT K/W K/W 1999 Oct 20 4 Philips Semiconductors Product specification Voltage regulator diodes GRAPHICAL DATA BZX99 series MGL741 handbook, full pagewidth 0 Sz (mV/K) −0.5 −1 C2V4 C3V0 C3V3 C3V6 C3V9 −1.5 −2 C4V3 C4V7 −2.5 10 Tj = 25 to 150 °C. 102 Iz (µA) 103 Fig.2 Temperature coefficient as a function of working current; typical values. handbook, halfpage 12 MGL742 MBG781 handbook, halfpage 300 Sz (mV/K) 8 C15 IF (mA) C12 C10 200 4 C8V2 C6V8 C6V2 C5V6 100 0 C5V1 −4 10 102 Iz (µA) 103 0 0.6 0.8 VF (V) 1.0 Tj = 25 to 150 °C. Tj = 25 °C. Fig.3 Temperature coefficient as a function of working current; typical values. Fig.4 Forward current as a function of forward voltage; typical values. 1999 Oct 20 5 Philips Semiconductors Product specification Voltage re.


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