MOS FET
.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipa...
Description
.
MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Gate Current
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Trj = 25°C
Derate above 25°C Junction Temperature Range Storage Temperature Range
Symbol vds Vdg Vgs
"G
PD
pd
Tj T stq
Value 25 30 ±30 30 300
1,7
800 4.56 175 -65 to +175
Unit
Vdc Vdc
Vdc mAdc
mW
mW/°C
mW
mVWC
°C
°C
2N4352
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOS FET
SWITCHING
P-CHANNEL — ENHANCEMENT
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
D(l = -10 mA, Vqs = o)
Zero-Gate-Voltage Drain Current
(vDs = - 10 v, vqs = o) ta = 25°c TA = 150°C
Gate Reverse Current
(Vqs = ±30V, VDS = 0) ON CHARACTERISTICS
Gate Threshold Voltage
(V DS = -10 V, Dl = -10/iA)
Drain-Source On-Voltage
(Iq = -2.0 mA, Vqs = -10 V)
On-State Drain Current
(Vqs = -iovDS = -lov)
SMALL-SIGNAL CHARACTERISTICS
Drain-Source Resistance
(V...
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