MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Volta...
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@TaTotal Device Dissipation
= 25°C
Derate above 25°C
Total Device Dissipation @Tq = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol BF BF BF 257 258 259
VCEO VCER VCBQ
160 250 300 160 250 300 160 250 300
VEBO
c
PD
5.0
0.1
0.8 4.57
pd Tj, T stg
5.0 28.6
-65 to +200
Unit
Vdc Vdc Vdc Vdc Adc' Watt
mW/°C
Watt
mW/°C
°C
Symbol
RflJC
Max
35
Unit
°C/W
BF257 BF258 BF259
CASE 79, STYLE 1 TO-39 (TO-205AD) HIGH VOLTAGE
TRANSISTOR
NPN SILICON
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage
(IC = 30 mAdc, Ib = 0)
Collector-Base Breakdown Voltage (IC = 100 uAdc. Ie = 0)
Emitter-Base Breakdown Voltage...