N-channel MOSFET
STD13N60M2
Datasheet
N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB...
Description
STD13N60M2
Datasheet
N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a DPAK package
TAB 23 1
DPAK D(2, TAB)
G(1)
S(3)
Features
Order code
VDS at TJ max.
RDS(on) max.
ID
STD13N60M2
650 V
380 mΩ
11 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
AM01476v1_tab
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
Product status link STD13N60M2
Product summary
Order code
STD13N60M2
Marking
13N60M2
Package
DPAK
Packing
Tape and reel
DS9632 - Rev 6 - June 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STD13N60M2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
Gate-source voltage
Drain current (continuous) at TC = 25 °C ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg
Storage temperature range
TJ
Operating junction temperature range
1. Pulse width is limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDS (peak) <...
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