STB13N60M2

STB13N60M2 Datasheet N-channel 600 V, 350 mΩ typ., 11 A MDmesh M2 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS at TJ max. RDS(on) max. ID STB13N60M2 650 V 380 mΩ 11 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Product status link STB13N60M2 Product summary Order code STB13N60M2 Marking 13N60M2 Package D²PAK Packing Tape and reel DS14361 - Rev 1 - June 2023 For further information contact your local STMicroelectronics sales office. www.st.com STB13N60M2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate-source voltage Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C dv/dt(2) Peak diode recovery voltage slope dv/dt(3) MOSFET dv/dt ruggedness Tstg Storage temperature range TJ Operating junction temperature range 1. Pulse width is limited by safe operating area. 2. ISD ≤ 11 A, di/dt ≤ 400 A/μs, VDS (...