BCW70

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW69 = H1 BCW70 = H2 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS D.C. current gain at Tj = 25 °C –IC = 2 mA; –VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz –IC = 10 mA; –VCE = 5 V Noise figure at RS = 2 kΩ –IC = 200 µA; –VCE = 5 V; f = 1 kHz; B = 200 Hz BCW69 > 120 hFE < –VCB0 max. –VCE0 max. –ICM max. Ptot max. Tj max. 260 BCW70 215 500 50 V 45 V 200 mA 250 mW 150 ° C fT typ. 150 MHz F< 10 dB Continental Device India Limited Data Sheet Page 1 of 4 BCW69 BCW70 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–bas...