MXTA14
CASE 345-01, STYLE 1
SOT-89
DARLINGTON TRANSISTOR
NPN SILICON
Refer to 2N6426 for graphs.
MAXIMUM RATINGS
Rating...
MXTA14
CASE 345-01, STYLE 1
SOT-89
DARLINGTON
TRANSISTOR
NPN SILICON
Refer to 2N6426 for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage
—Collector Current Continuous
Symbol vCEO V CES v EBO
"C
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Total Device Dissipation, T^ = 25°C Derate above 25°C
PD
Storage Temperature
T stq
"Thermal Resistance Junction to Ambient
R 0JA
'Package mounted on 99.5% alumina 10 x 12 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.]
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage dC = 100 fiA)
Collector Cutoff Current (VC B = 30)
Emitter Cutoff Current (V BE = 10 V)
ON CHARACTERISTICS
DC Current Gaind) dC = 10 mA, VC E = 5.0 V) dC = 100 mA, Vce = 5.0 V)
Collector-Emitter Saturation Voltaged) dC = 100 mA, Bl = 0.1 mA)
Base-Emitter On Voltage dc = 100 mA, Vce = 5.0 V)
SMALL-SIGNAL CHARACTERISTICS
—Current-Gain Bandwidth Product
(VC e = 5.0 V, ...
