MPSW93

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous @Total Device Dissipation Ta = 25°C Derate above 25°C @Total Device Dissipation Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol MPSW92 MPSW93 VCEO 300 200 VCBO 300 200 VEBO 5.0 c 500 PD 1.0 8.0 Pd Tj. Tstg 2.5 20 -55 to +150 Unit Vdc Vdc Vdc mAdc Watt mW/°C Watts mW/°C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol R«uc RejA Max 50 125 Unit °C/W °c/w MPSW92 MPSW93 CASE 29-03, STYLE 1 TO-92 (TO-226AE) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) c(l = 1.0 mAdc, Ib = 0) Collector-Base Breakdown Voltage c{l = 100 /iAdc, Ie = 0) Emitter-Base Breakdown Voltage E(l = 100 iiAdc. lc = 0) Collector Cu...