BC107/ BC108/ BC109
Low Power Bipolar Transistors
TO-18
Features:
NPN Silicon Planar Epitaxial Transistors.
Suitable f...
BC107/ BC108/ BC109
Low Power Bipolar
Transistors
TO-18
Features:
NPN Silicon Planar Epitaxial
Transistors.
Suitable for applications requiring low noise and good hFE linearity, eg. audio pre-amplifiers, and instrumentation.
TO-18 Metal Can Package
Pin Configuration
1. Emitter. 2. Base. 3. Collector.
Dimension
A B C D E F G H J K L
Minimum
Maximum
5.24 5.84
4.52 4.97
4.31 5.33
0.40 0.53
- 0.76 - 1.27 - 2.97
0.91 1.17
0.71 1.21
12.70
-
45°
Dimensions : Millimetres
Page 1
30/05/05 V1.0
BC107/ BC108/ BC109
Low Power Bipolar
Transistors
Absolute Maximum Ratings
DESCRIPTION Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate Above 25°C Power Dissipation at Tc = 25°C Derate Above 25°C Operating And Storage Junction Temperature Range Thermal Resistance Junction to Case
SYMBOL VCEO VCBO VEBO IC PD
PD
Tj, Tstg
BC107 BC108 BC109 UNIT
45 25 25 V
50 30 30 V
6.0 5.0 5.0 V
0.2 A
0.6 W...
