BC109C

BC109 Series Low Power Bipolar Transistors Feature: NPN Silicon Planar Epitaxial Transistors. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 08/04/06 V1.0 BC109 Series Low Power Bipolar Transistors Absolute Maximum Ratings Description Symbol BC109 Collector-Emitter Voltage VCEO 25 Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Power Dissipation at Ta = 25°C Derate above 25°C Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Thermal Resistance Junction to Case VCBO VEBO IC PD TJ, Tstg Rth (j-c) 30 5.0 0.2 0.6 2.28 1.0 6.67 -65 to +200 175 Electrical Characteristics (Ta = 25°C unless otherwise specified) Description Symbol Test Condition Minimum Collector-Emitter Voltage E...