BC109

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Total Device Dissipation « Ta = 25°C Derate above 25°C Total Device Dissipation r« Tc = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCBO VEBO "C PD pd BC BC BC 107 108 109 45 25 25 50 30 30 65 5 0.2 0.6 2.28 1 6.67 Tj, T s tg -65 to +200 Unit Vdc Vdc Vdc Amp Watt mW/°C Watt mW/°C °C Symbol RftJC Max 175 Unit °C/W BC107 BC108 BC109 CASE 22-03, STYLE 1 TO-18 (TO-206AA) TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector Base Leakage Current (IE = 0, VcB = 45 V) dE = 0, V C B = 45 V. TAmb= 125°C) dE = 0, VcB = 25 V) (IE = 0, V C B = 25 V, TA mb= 125°C) Emitter Base Breakdown Voltage (IE = 10 uA, lc = 0) BC107 BC107 BC108/109 BC108/...