2N6430

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation (a T"a = 25°C Derate above 25°C @Total Device Dissipation Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO v CBO VEBO ic PD 2N6430 2N6431 200 300 200 300 6.0 50 500 2.86 PD TJ' Tstg 1.8 10.3 -65 to +200 Unit Vdc Vdc Vdc mA mW mW/°C Watts mW/°C °c 2N6430 2N6431 CASE 22, STYLE 1 TO-18 (TO-206AA) GENERAL PURPOSE TRANSISTOR NPN SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) (IC = 1.0 mAdc, Ib = 0) 2N6430 2N6431 Collector-Base Breakdown Voltage dC = 0.1 mAdc, Ie = 0) 2 N 6430 2N6431 Emitter-Base Breakdown Voltage E(l = 0.1 mAdc, Ic = 0) Collector Cutoff Current (Vcb = 16° Vac> (Vcb = 200 Vdc) Emitter Cutoff Current (V EB = 4.0 Vdc, Ic = 0) ON CHARACTERISTICS DC Current Gain dC = 1.0 mAd...