2N3814

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Total Device Dissipation @ TA = 25°C Metal Can (2N3806 thru 2N3810A 2N3811,A> Derate above 25°C Total Device Dissipation @ TC = 25°C Flat Package (2N3812 thru 2N3816,A,2N3817,A) Derate above 25°C Operating and Storage Junction Temperature Range Symbol v CEO vCBO v EBO "C PD Value 60 60 5.0 50 One Die Both Die 500 600 Unit Vdc Vdc Vdc mAdc mW 2.86 3.43 mW/°C Pd mW 250 350 TJ- Tstg 1.5 2.06 -65 to +200 mW/°C °C 2N3806 thru 2N3810,A 2N381M CASE 61 0A-04, STYLE 1 2N3812 thru 2N3816,A 2N3817,A CASE 654-07, STYLE 1 —2N3810, 2N3811 JAN, JTX, JTXV AVAILABLE DUAL AMPLIFIER TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(l) PC = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage PC = 10 MAdc, El = Q) Emitter-Base Breakdown Voltage (JE = 10 MAd...