2N3425
CASE 654-07, STYLE 1 DUAL
AMPLIFIER TRANSISTORS
NPN SILICON
Refer to MD2369,A,B for graphs.
MAXIMUM RATINGS
Rati...
2N3425
CASE 654-07, STYLE 1 DUAL
AMPLIFIER
TRANSISTORS
NPN SILICON
Refer to MD2369,A,B for graphs.
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
@Total Device Dissipation TA = 25°C
Derate above 25°C
@Total Device Dissipation Tc = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VCEO VCER VCBO Vebo
15 20 40 5.0
One Die Both Die
Vdc Vdc Vdc Vdc
Pd 0.3
0.4 Watt
1.72
2.28 mW/°C
pd 0.75
1.5 Watts
4.3 8.55 mW/°C
TJ' Tstg
- 65 to + 200
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) dc = 30 mAdc, Rbe * 1 Collector-Emitter Sustaining VoltageO) dc = 10 mAdc, Ib = 0) Collector-Base Breakdown Voltage dc = 10 /uAdc, Ie = 0) Emitter-Base Breakdown Voltage (lg = 10 /xAdc, Iq = 0)
ohms)
Collector Cutoff Current (Vce = 20 Vdc, V E B(off) = 0.25 Vdc, TA = 125°C) Collect...
