Document
BCW66F,G
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol
vCEO vCBO v EBO
c
Characteristic
Symbol
*Total Device Dissipation, TA = 25°C
Derate above 25°C
PD
Storage Temperature
'stg
•Thermal Resistance Junction to Ambient
R WA
Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Characteristic
Symbol
Typ
Collector-Emitter Breakdown Voltage dC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage dC = 10 /iAdc, VEB = 0)
Emitter-Base Breakdown Voltage (IE = 10 AiAdc, lc = 0)
Collector Cutoff Current (Vce = 45 Vdc, lc = 0)
(VCE = 45 Vdc, cl = 0, TA
Emitter Cutoff Current
(VEB = 4.0 Vdc, cl = 0)
ON CHARACTERISTICS
150°C)
DC Current Gain (IC = 100 nAdc, Vce
1.0 Vdc)
(IC = 10 mAdc, Vce = 10 Vdc)
.