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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW65A, BCW65B BCW65C
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking BCW65A = EA BCW65B = EB BCW65C = EC
PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain
–IC = 100 mA; –VCE = 10 V
IC = 10 mA; VCE = 1 V
IC = 100 mA; VCE = 1 V
IC = 500 mA; VCE = 2 V
–VCBO –VCEO –VEBO –IC Ptot hFE
BCW65A 65B
max. 60 60
max. 32 32
max. 5
5
max. 800 800
max 225 225
65C 60 V 32 V 5V 800 mA 225 mW
min. 35
min. 75 max. 220
min. 100 max. 250
min. 35
50 80 110 180
160 250 400 630 60 100
Continental Device India Limited
Data Sheet
Page 1 of 3
BCW65A, BCW65B BCW65C
RATINGS (at TA.