BCW65A,B,C
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE TRANSISTOR
NPN SILICON
Rating...
BCW65A,B,C
MAXIMUM RATINGS
CASE 318-02/03, STYLE 6
SOT-23 (TO-236AA/AB)
GENERAL PURPOSE
TRANSISTOR
NPN SILICON
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
—Collector Current Continuous
THERMAL CHARACTERISTICS
Symbol vCEO vCBO vEBO
ic
Characteristic
*Total Device Dissipation, T^ = 25°C Derate above 25°C
Symbol PD
Storage Temperature
Tstq
'Thermal Resistance Junction to Ambient
R &JA
mmPackage mounted on 99.5% alumina 10 x 8 x 0.6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characte ristic
"
Symbol Min Typ
Collector-Emitter Breakdown Voltage (IC = 10 mAdc, Ib = 0)
Collector-Emitter Breakdown Voltage PC - 10/xAdc, VgB = 0)
Emitter-Base Breakdown Voltage (IE = 10/iAdc, Ic = 0)
Collector Cutoff Current
(VCE = 32 Vdc, El = 0) (Vqe = 32 Vdc, Ie = 0, TA
Emitter Cutoff Current
(VE b = 4.0 Vdc, Ic = 0)
ON CHARACTERISTICS
150°C)
DC Current Gain (IC = 100 [iAdc, Vce
10 Vdc)
(IC = 10 mAdc, Vce = 10 ...