PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS
High Voltage Video Amplifier
Darlington Transistor
* Power D...
PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO
TRANSISTORS
High Voltage Video Amplifier
Darlington
Transistor
* Power Dissipation: PD=625mW
BF491 THRU BF493
.205(5.20) .175(4.45)
.082(2.082) .078(1.982)
321
.022(0.55) .016(0.41)
.210(5.33) .170(4.32)
TO-92
.50(12.7MIN.)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified.
Absolute Maximum Ratings T A=25 OC unless otherwise noted
DESCRIPTION
SYMBOL
Collector-Emitter Voltage
VCEO
Collector Base Voltage
VCBO
Emitter Base Voltage
VEBO
Collector Current Continuous
Total Device Dissipation @ Ta=25ºC Derate Above 25ºC
IC PD
Total Device Dissipation @ Tc=25ºC Derate Above 25ºC
PD
Operating And Storage Junction Temperature Range
Tj,TSTG
BF491 200 200
6
.058(1.40) .045(1.14)
.055(1.40) .045(1.14)
.165(4.19) .125(3.18)
321
.020(0.50) .014(0.35)
COLLECTOR 1
BASE 2
3 EMITTER
.062(1.53) .045(1.14)
Dimensions in inches and (millimeters)
BF492 250 250
8...