2N3741

Inchange Semiconductor Silicon PNP Power Transistors Product Specification 2N3740 2N3741 DESCRIPTION With TO-66 package Excellent safe area limits Low collector saturation voltage APPLICATIONS Suitable for use in as drivers,switches and medium-power amplifier and applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage 2N3740 2N3741 VCEO 2N3740 Collector-emitter voltage 2N3741 VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -60 -80 -60 -80 -7 -4 -10 -2 25 150 -65~200 UNIT V V V A A mA W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case MAX 7.0 UNIT /W Inchange Semiconductor Silicon PNP Power Transistor...