Document
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/544
Devices
2N5152 2N5152L
2N5154 2N5154L
TECHNICAL DATA
Qualified Level JAN
JANTX JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation
@ TA = +250C(1) @ TC = +250C(2)
VCEO VCBO VEBO IC(3, 4)
PT
Operating & Storage Temperature Range
Tj, Tstg
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
1) Derate linearly 5.7 mW/0C for TA > +250C 2) Derate linearly 66.7 mW/0C for TC > +250C 3) Derate linearly 80 mW/0C for TC > +250C 4) This value applies for PW ≤ 8.3 ms, duty cycle ≤ 1%
RθJC
All Units 80 100 5.5 2.0 1.0 11.8
-65 to +200
Max. 15
Units Vdc Vdc Vdc Adc W W °C
Unit 0C/W
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics
Symbol
Min.
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc, IB = 0
Emitter-Base Cutoff Current
V(BR)CE.