2N3763

TECHNICAL DATA PNP SWITCHING SILICON TRANSISTOR Qualified per MIL-PRF-19500/396 Devices 2N3762 2N3762L 2N3763 2N3763L 2N3764 2N3765 Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol 2N3762* 2N3764 2N3763* 2N3765 Unit Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current VCEO VCBO VEBO IC 40 60 40 60 5.0 1.5 2N3762* 1 2N3764 2 Vdc Vdc Vdc Adc Total Power Dissipation @ TA = +250C PT Operating & Storage Junction Temp. Range Top, Tstg 2N3763* 2N3765 1.0 0.5 -55 to +200 W 0C THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 2N3762* 2N3764 2N3763* 2N3765 Thermal Resistance Junction-to-Case RθJC 60 88 0C/W *Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices 1) Derate linearly at 5.71 mW/0C for TA > +250C 2) Derate linearly at 2.86 mW/0C for TA > +250C ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol OFF CHA...