SFT8600-5

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFT8600 __ __ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV Level │ S = S Level └ Package /5 = TO-5 SFT8600/5 1 AMP 1000 Volts NPN Transistor FEATURES:  BVCEO to 400 volts  Very Low Saturation Voltage  Very Low Leakage  High Gain from 20 mA to 250 mA  200°C Operating, Gold Eutectic Die Attach  Superior Performance over JEDEC 2N5010-15 Series  High Speed Switching tf = 0.4µS TYP Maximum Ratings Collector – Emitter Voltage (RBE = 1KΩ) Collector – Base Voltage Emitter – Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 100º C Derate above 25º C Operating and Storage Temperature Thermal Resistance, Junction to Case Symbol VCEO VCER VCBO VEBO IC IB PD Tj, Tstg RθJC Value 400 1000 100...