Document
PRELIMINARY
SOLID STATE DEVICES, INC.
14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET
FEATURES: BVCER to 1000 volts Very Low Saturation Voltage Very Low Leakage High Gain from 20 mA to 250mA Gold Eutectic Die Attach Superior Performance over JEDEC 2N5010-15 Series High Speed Switching tf = 0.4:s TYP
SFT8600/4
1 AMP 1000 VOLTS NPN TRANSISTOR
CLCC-4
MAXIMUM RATINGS Collector-Emitter Voltage ( RBE = 1kS) Collector-Base Voltage
Emitter-Base Voltage Collector Current
Base Current Total Device Dissipation @ TC = 25oC
@ TA = 25oC Derate above @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case Junction to Ambient
ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage
((IICC
= =
10mAdc) 20:Adc,
RBE
=
1kS)
Collector-Base Breakdown Voltage (IC = 20:Adc)
Emitter-Base Breakdown Voltage (IE = 20:Adc)
Collector Cutoff Current (VCB = 800Vdc)
NOTE: All specification.