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SFT8600-4 Dataheets PDF



Part Number SFT8600-4
Manufacturers SSDI
Logo SSDI
Description 1 AMP 1000 VOLTS NPN TRANSISTOR
Datasheet SFT8600-4 DatasheetSFT8600-4 Datasheet (PDF)

PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • BVCER to 1000 volts • Very Low Saturation Voltage • Very Low Leakage • High Gain from 20 mA to 250mA • Gold Eutectic Die Attach • Superior Performance over JEDEC 2N5010-15 Series • High Speed Switching tf = 0.4:s TYP SFT8600/4 1 AMP 1000 VOLTS NPN TRANSISTOR CLCC-4 MAXIMUM RATINGS Collector-Emitter Voltage ( RBE = 1kS) Collector-Base .

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PRELIMINARY SOLID STATE DEVICES, INC. 14005 Stage Road * Santa Fe Springs, Ca 90670 Phone: (562) 404-4474 * Fax: (562) 404-1773 DESIGNER'S DATA SHEET FEATURES: • BVCER to 1000 volts • Very Low Saturation Voltage • Very Low Leakage • High Gain from 20 mA to 250mA • Gold Eutectic Die Attach • Superior Performance over JEDEC 2N5010-15 Series • High Speed Switching tf = 0.4:s TYP SFT8600/4 1 AMP 1000 VOLTS NPN TRANSISTOR CLCC-4 MAXIMUM RATINGS Collector-Emitter Voltage ( RBE = 1kS) Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Device Dissipation @ TC = 25oC @ TA = 25oC Derate above @ TC = 25oC Operating and Storage Temperature Thermal Resistance, Junction to Case Junction to Ambient ELECTRICAL CHARACTERISTICS Collector-Emitter Breakdown Voltage ((IICC = = 10mAdc) 20:Adc, RBE = 1kS) Collector-Base Breakdown Voltage (IC = 20:Adc) Emitter-Base Breakdown Voltage (IE = 20:Adc) Collector Cutoff Current (VCB = 800Vdc) NOTE: All specification.


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