MPSH17
NPN Silicon Epitaxial Planar Transistor
The transistor is subdivided into one group according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (T a = 25 oC)
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation @ Ta=25? Derate above 25? Junction Temperature Storage Temperature Range
Symbol VCBO VCEO VEBO IC
Ptot
Tj TS
G S P FORM A IS AVAILABLE
Value 20 15 3 50 350 2.81
-55 to +150 -55 to +150
Unit V V V mA
mW mW/?
? ?
РАДИОТЕХ
Тел.: (495) 795-0805 Факс: (495) 234-1603 Эл. почта:
[email protected] Веб: www.rct.ru
®
MPSH17
Characteristics at Tamb=25 OC
DC Current Gain at IC=5.0mA, VCE=10V
Collector Cutoff Current at VCB=15V
Collector-Base Breakdown Voltage at IC=100µA
Collector-Emitter Breakdown Voltage at IC=1.0mA
Emitter-Base Breakdown Voltage at IE=10µA
Co.