SILICON PLANAR EPITAXIAL NPN TRANSISTOR
2N4237
• VCBO=50V(Min), VCEO=40V(Min) • Hermetic TO-39 Metal package. • Ideally...
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
2N4237
VCBO=50V(Min), VCEO=40V(Min) Hermetic TO-39 Metal package. Ideally suited for General Purpose and
Amplifier Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
50V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC Continuous Collector Current
1.0A
IB Base Current
0.5A
PD Total Power Dissipation at TA = 25°C
1.0W
Derate Above 25°C
5.7mW/°C
PD Total Power Dissipation at TC = 25°C
6W
Derate Above 25°C
34mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max. Units 175 °C/W 29 °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. ...
