BCX51

BCX51-BCX53 PNP Silicon AF Transistors Features For AF driver and output stages High collector current Low collector-emitter saturation voltage RoHS compliant package Mechanical Data Case: SOT-89 Molded plastic Epoxy: UL94V-O rate flame retardant Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [BCX51-BCX53] © Bruckewell Technology Corporation Rev. A -2014 BCX51-BCX53 PNP Silicon AF Transistors MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Maximum Ratings (Tc=25°C unless otherwise noted) Symbol Parameter BCX51 BCX52 VCEO Collector-Emitter Voltage 45 60 VCBO Collector-Base Voltage 45 60 VEBO IC ICM Emitter-Base Voltage Collector Current—Continuous Peak collector current, tp ≤ 10 55 1 1.5 IB Base current 100 IBM Peak base current Ptot Total power dissipation, TS ≤ 120 °C 200 2 TJ Junction temperature 150 Tstg Storage temperature -65~+150 BCX53 80 100 5 Unit V V V A A mA mA W °C °C THERMAL CHAR...