2N3700

Bipolar Transistor NPN Description: This is a silicon NPN transistor in a TO-18 type case designed primarily for amplifier and switching applications. The device features high breakdown voltage, Low leakage current, low capacity, and beta useful over an extremely wide current range. Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Continuous Collector Current Total Device Dissipation -(TA = +25°C), Derate Above 25°C Total Device Dissipation -(TA = +25°C), Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range, Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Lead Temperature (During Soldering, 1/16" from case, 60sec max) Symbol VCBO VCEO VEBO IC PD TJ Tstg RthJC RthJA TL Rating 140 80 7 1 0.5 2.85 1.8 10.6 -65 to +200 97 350 300 Pin Configuration: 1. Emitter 2. Base 3. Collector Unit V A W mW/°C  °C °C/W °C www.element14.com www.farnell.com www.newark.com Page <1>...