Bipolar Transistor
Description:
A epitaxial silicon PNP planar transistor in a TO-39 type package designed for use as d...
Bipolar
Transistor
Description:
A epitaxial silicon
PNP planar
transistor in a TO-39 type package designed for use as drivers for high power
transistors in general purpose amplifier and switching circuits.
Collector 3
2 Base
1 Emitter
Maximum Ratings:
Characteristic
Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Base Current Total Device Dissipation (TA = +25°C) Total Device Dissipation(TC = +25°C) Operating Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction-to-Case
Symbol VCBO VCEO
IC
IB
Ptot
TJ Tstg RthJC
Rating
80 60 6 1 500 1 6 +200 -65 to +200 29
Unit
V
A mA W
°C °C/W
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Page <1>
23/04/13 V1.0
Bipolar
Transistor
Electrical Characteristics: (TA = +25°C Unless otherwise specified)
Parameter
Symbol
Test Conditions
Collector Cutoff Current
Emitter Cutoff Voltage Collector - Emitter Sustaining Voltage Collector - Emitter Saturation Voltage Base...