2N5195

Bipolar Transistor NPN Collector 3 2 Base 1 Emitter Description: Silicon TO-126, PNP Power Transistor for use in power amplifier and switching excellent safe area limits Maximum Ratings: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C) Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO lC IB PD TJ Tstg Rating 80 5 4 1 40 320 -65 to +150 Unit V A W mW/°C °C www.element14.com www.farnell.com www.newark.com Page <1> 29/04/13 V1.0 Bipolar Transistor Electrical Characteristics (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions OFF Characteristics Collector-Emitter Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON Characteristics V(BR)CEO ICEO ICEX ICBO IEBO IC = 100mA, IB = 0 (Note 1) VCE = 80V, IE = 0 VCE = 80VEB(off), IE = 1.5V VCB = 80V, IE = 0 VEB = 5V, IC ...