Power Transistor
NPN
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol...
Power
Transistor
NPN
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C)
Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range
Collector 3
2 Base
1 Emitter
Symbol VCBO VCEO VEBO lC IB
PD
TJ Tstg
Rating 70 80 5 7 3 40
-65 to +150
Unit
V
A W mW/°C °C
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24/04/13 V1.0
Power
Transistor
Electrical Characteristics (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
Collector-Emitter Breakdown Voltage (Note 1)
Collector Cut-Off Current
Emitter Cut-Off Current ON Characteristics
V(BR)CEO ICEX ICEO IEBO
IC = 100mA, IB = 0 VCE = 80V, VEB(off) = 1.5V
VCB = 60V, IB = 0 VEB = 5V, IC = 0
DC Current Gain (Note 1)
Collector - Emitter Saturation Voltage (Note 1) Base - Emitter on Voltage (Note 1) Small Signal Characteristics
hFE...
