Bipolar Transistor
NPN
Collector 3
Features:
• High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Coll...
Bipolar
Transistor
NPN
Collector 3
Features:
High Collector Sustaining Voltage :VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 1V @ IC = 10A
2 Base
1 Emitter
Description:
High power,
NPN, TO-3, Silicon
Transistor Designed for use in power amplifier and switching circuits applications
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C)
Derate Above 25°C Operating Junction Temperature Range, Storage Temperature Range
Symbol VCBO VCEO lC IB
PD
TJ Tstg
Rating
80
20 7.5 200 1.14
-65 to +200
Unit V
A W mW/°C °C
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23/04/13 V1.0
Bipolar
Transistor
Electrical Characteristics (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current ON Characteristics ( See Note 1)
DC Current G...
