2N5303

Inchange Semiconductor Silicon NPN Power Transistors Product Specification 2N5301 2N5302 2N5303 DESCRIPTION With TO-3 package Complement to type 2N4398/4399/5745 Low collector/saturation voltage Excellent safe operating area APPLICATIONS For use in power amplifier and switching circuits applications. PINNING PIN 1 2 3 DESCRIPTION Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER 2N5301 VCBO Collector-base voltage 2N5302 2N5303 2N5301 VCEO Collector-emitter voltage 2N5302 2N5303 VEBO Emitter-base voltage IC Collector current 2N5301/5302 2N5303 IB Base current PD Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 40 60 80 40 60 80 5 30 20 7.5 200 200 -65~200 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal resistance junction to case VALUE 0.875 UNIT /W Inchange Semiconductor Silicon...