Bipolar Transistor
Features:
• High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA • Low Collector Emi...
Bipolar
Transistor
Features:
High Collector Emitter Sustaining Voltage :VCEO = 80V @ IC = 200mA Low Collector Emitter saturation Voltage VCE(sat) 0.75V @ IC = 10A
NPN
Collector 3
2 Base
1 Emitter
Description:
High Power TO-3,
NPN, Silicon
Transistor Designed for use in power amplifier and switching circuits applications
Maximum Ratings:
Characteristic Collector-Base Voltage Collector-Emitter Voltage Continuous Collector Current Base Current Total Device Dissipation (TC = +25°C)
Derate Above 25°C Operating Junction Temperature Range Storage Temperature Range
Symbol VCBO VCEO lC IB
PD
TJ Tstg
Rating
40
30 7.5 200 1.14
-65 to +200
Unit V
A W mW/°C °C
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23/04/13 V1.0
Bipolar
Transistor
Electrical Characteristics (TA = +25°C unless otherwise specified)
Parameter OFF Characteristics Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current ON Characteristics
DC Current Gain (N...
