2N5679 2N5680 PNP 2N5681 2N5682 NPN
COMPLEMENTARY SILICON POWER TRANSISTORS
TO-39 CASE
w w w. c e n t r a l s e m i . c...
2N5679 2N5680
PNP 2N5681 2N5682
NPN
COMPLEMENTARY SILICON POWER
TRANSISTORS
TO-39 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5679, 2N5681 series devices are complementary silicon power
transistors, manufactured by the epitaxial planar process, designed for general purpose amplifier and switching applications where high voltages are required.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Continuous Base Current
IB
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
ΘJA
Thermal Resistance
ΘJC
2N5679 2N5681
100
2N5680 2N5682
120
100 120
4.0
1.0
0.5
1.0
10
-65 to +200
175
17.5
UNITS V V V A A W W °C
°C/W °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDI...